Semiconductor Devices (1968-69)

The technology and design of gallium arsenide MOS and Schottky Barrier Gate Field Effect Transistors.

Semiconductor Physics and Devices (1964-68)

Measurement of the electrical properties of silicon films grown on alpha-alumina substrates from 2K to 573K. Design and manufacture of, and measurements on devices made in silicon on alumina.

Mail To:

Dr. B.W. Jervis, b.w.jervis@shu.ac.uk

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